EDUCATION

	University of California Santa Barbara (UCSB) Masters + Ph.D. in Electronic Materials, Materials Department Thesis: “Improved quality non-polar III-Nitride films and devices" (PDF) Committee: Steve DenBaars, James Speck, Shuji Nakamura, Evelyn Hu, Chris Van de Walle Masters in Economics, Department of Economic        With emphasis on Business Economics Technology Management Certificate (GPMP), Department of Engineering         With emphasis in "New product development, new venture creation in corporate and entrepreneurial context"
	University of Pittsburgh B. Sc. in Materials Science and Engineering, Materials Science and Engineering Department         Transferred from Middle East Technical University (METU), Metallurgical and Materials Science and Engineering

RESEARCH

· Thin films and crystall growth with MOCVD (Metalorganic Chemical Vapor Deposition)

· Microfabrication and processing: For Nitride based devices:  photolithography, reactive ion etching (RIE), inductively coupled plasma etching (ICP), thin film deposition (PECVD, e-beam), RTA

· Characterization: Hall & TLM, PL, EL,  I-V, AFM, X-RAY Diffraction, SEM Measurement Techniques and Analysis, Q - dielectric factor measurements - Single Port Reflection Method with Network Analyzer

· At UCSB worked on improving the material characteristics, crystal quality and device performance of non-polar III-Nitride semiconducting material to meet U. S. Department of Energies energy saving goal of $98 billion by 2020. For this purpose:

· Developed a novel processing and growth technique called “Sidewall Lateral Epitaxial Overgrowth (SLEO)” reducing the defect densities 3-4 orders of magnitude in non-polar a-plane III-Nitrides and have a patent application.

· Explored a new non-polar crystallographic orientation m-plane (1-100) gallium nitride growth on m-plane SiC with Metalorganic Chemical Vapor Deposition (MOCVD) and have a patent application.

· Demonstrated improved electron mobility and internal quantum efficiency 360 nm nonpolar UV GaN/AlGaN LEDs.

· Carried out research on growth, and structural, electrical, and TRPL characterization of AlGaN/GaN multiple quantum well LED structures on non-polar a-plane GaN in collaboration with Army Research Lab.

PATENTS

· U.S. patent # 20060270076

”Defect Reduction of Non-polar {11-20} a- and {1-100} m-plane GaN with Single-Step Sidewall Lateral Epitaxial Overgrowth (SLEO)”, Bilge Imer, James S. Speck, Steven P. DenBaars, submitted on March 30,2005 – granted on November 30, 2006.

· U.S. patent # 20060270087

 “Growth of non-polar (1-100) m-plane GaN with Metalorganic Chemical Vapor Deposition (MOCVD)”, Bilge Imer, James S. Speck, Steven P. DenBaars, submitted on March 30,2005 – granted on November 30, 2006.

PUBLICATIONS

A. REFEREED PUBLICATIONS

I.     PUBLISHED  (Total number of citations 56 as of August 2007)

1-”Structural and electrical characterization of a-plane GaN grown on a-plane SiC”, M. D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, Phys. Stat. Sol. (c) 0, No. 7, 2132-2135, October 2003

2- Microstructural evolution of a-plane GaN grown on a-plane SiC by Metalorganic chemical vapor deposition”, M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Applied Physics Letters, Vol. 84, No.8, February 2004

3- ”Growth of thick (11-20) GaN using a metal interlayer”, P. R. Tavernier, B. Imer, S. P. DenBaars, and D. R. Clarke, Applied Physics Letters, Vol. 85, No. 20, November   2004

4- “Intensity Dependent Time-Resolved Photoluminescence Studies of GaN/AlGaN Multiple Quantum Wells of Varying Well Width on Laterally Overgrown a‑plane and Planar c-plane GaN “,(G. A. Garrett, H. Shen, W. Wraback) from U.S. Army Research Laboratory, Sensors and Electron Devices Directorate (B. Imer, B. Haskell, S. Keller, S. Nakamura, S. P.  DenBaars) from UCSB,  Physica Status Solidi (a), No. 5, 846 (2005)

5- “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”, (Sandip Ghosh, Pranob Misra, and Holger T. Grahn) from Paul-Drude-Institut fur Festk¨orperelektronik, Berlin, Germany (Bilge Imer, Shuji Nakamura, S. P. DenBaars and J. S. Speck) from UCSB, J. of Appl. Phys.,98, 026105, July 2005

6- “High Quality Non-polar ( a-plane GaN with Sidewall Lateral Epitaxial Overgrowth (SLEO)”, Bilge Imer, James S. Speck, Steven P. DenBaars,  Applied Physics Letters, Vol. 88, Number 6-061908, February 2006